PART |
Description |
Maker |
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG http:// Siemens Semiconductor Group
|
IBM11N32645BB-60W IBM11N32735BB-60W IBM11N32645CB- |
x72 EDO Page Mode DRAM Module x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
IBM11N4645CB-60J IBM11N4735CB-50J |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块 x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd. Electronic Theatre Controls, Inc.
|
MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO DPDT 10A MINI 24VDC 2097152字32位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MSC23CV16458D-XXBS4 MSC23CV16458D MSC23CV16458D-60 |
1M X 64 EDO DRAM MODULE, 60 ns, DMA144 SODIMM-144 From old datasheet system 1,048,576-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
|
Oki Electric Industry Co., Ltd.
|
AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
IS41C16128-35T IS41C16128-35TI IS41C16128-35K IS41 |
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 35 ns, PDSO40 128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 40 ns, PDSO40 128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 45 ns, PDSO40 128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 50 ns, PDSO40 128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 60 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
IC41C82002 IC41LV82002 IC41C82002-50J IC41C82002-5 |
DYNAMIC RAM, EDO DRAM 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|